C640

2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 100 150 150 -55 to +150 Unit V V V mA mW O O C C Page 1 of 2 7/15/2011 Free Datasheet http://www.nDatasheet.com Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=6V, IC =1mA 1) Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 μA ICBO 0.1 μA V(BR)EBO 5 V V(BR)CEO 30 V V(BR)CBO 40 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Symbol Min. Typ. Max. Unit Page 2 of 2 7/15/201...