C2489

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION ·Good Linearity of hFE ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 APPLICATIONS ·Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 15 A PC 120 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.nDatasheet.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2489 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IE= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2 mA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 40 280 hFE-2 DC Current Gain IC= 10A ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 50 MHz ‹ hFE-1 Classifications R 40-80 Q 60-120...