2SK3580-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Super FAP-G Series
Features
High...
2SK3580-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 300 270 ±12 ±48 ±30 12 193 20 5 2.16 35 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
°C °C *6 kVrms < < DSS, Tch=150°C < *1 L=2.32mH, Vcc=48V *2 Tch=150°C *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV *4 VDS < 300V *5 V GS =-30V *6 t=60sec f=60Hz =
Electrical characteristics (Tc =25°C unless otherwise specified)
www.DataSheet4U.com Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Dr...
