SSC8033GS3

SSC8033GS3 P-Channel Enhancement Mode MOSFET z Features VDS -30V VGS ±20V z RDSon TYP 52mR@-10V 68mR@-4V5 ID -4.2A Applications ¾ Load Switch ¾ DCDC conversion ¾ TFT panel power switch z Pin configuration Top View z General Description This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Package Information 1/4 SSC-3V1 http://www.spirit-semi.com Free Datasheet http://www.nDatasheet.com SSC8033GS3 z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range PD TJ, TSTG TA=25°C ID -16 1 -55 to +150 A W °C Symbol VDSS VGSS Limit -30 ±20 -4.2 Unit V V A z Electrical Characteristics @TA = 25℃ unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate–Body Leakage Current V(BR)DSS IDSS IGSS VGS = 0 V, ID = -250μA VDS = -24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V -30 ----3 ±1.5 --200 ±50 V nA nA ON CHARACTERISTICS Gate Threshold Voltage Drain–Source On–State Resistance VGS(TH) RDS(ON) VG...