2Gb C-die NAND Flash
Rev. 0.2, May. 2010 K9F2G08U0C
Advance
2Gb C-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRON...
Description
Rev. 0.2, May. 2010 K9F2G08U0C
Advance
2Gb C-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
-1Free Datasheet http://www.datasheetlist.com/
K9F2G08U0C
datasheet
History 1. Initial issue 1. DC Parameter is chagned 2. Typo is modified 1. Max tR value has changed from 35us to 40us 2. Min tRC/ tWC value has changed fr...
Similar Datasheet