Document
FDP12N50F / FDPF12N50FT N-Channel MOSFET
December 2007
UniFETTM
FDP12N50F / FDPF12N50FT
N-Channel MOSFET
500V, 11.5A, 0.7Ω Features
• RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G G D S
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 165 1.33 -55 to +150 300 11.5 6.9 46 456 11.5 16.5 4.5 42 0.33 FDP12N50F FDPF12N50FT 500 ±30 11.5* 6.9* 46* Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP12N50F FDPF12N50FT 0.75 0.5 62.5 3.0 62.5
o
Units C/W
©2007 Fairchild Semiconductor Corporation FDP12N50F / FDPF12N50FT Rev. A1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP12N50F FDPF12N50FT Device FDP12N50F FDPF12N50FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250µA, VGS = 0V, TJ = 25oC ID = 250µA, Referenced to VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = ±30V, VDS = 0V 25oC 500 0.5 10 100 ±100 V V/oC µA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDS = 40V, ID = 6A
(Note 4)
3.0 -
0.59 12
5.0 0.7 -
V Ω S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 400V, ID = 11.5A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
1050 135 11 21 6 9
1395 180 17 30 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 11.5A RG = 25Ω
(Note 4, 5)
-
21 45 50 35
50 100 110 80
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 11.5A VGS = 0V, ISD = 11.5A dIF/dt = 100A/µs
(Note 4)
-
134 0.37
11.5 46 1.5 -
A A V ns µC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP12N50F / FDPF12N50FT Rev. A1
2
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/
FDP12N50F / FDPF12N50FT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
10
ID,Drain Current[A]
1
ID,Drain Current[A]
10
150 C
o
25 C
o
0.1
0.05 0.1
*Notes: 1. 250µs Pulse Test 2. TC = 25 C
o
* Notes : 1. VDS = 20V 2. 250µs Pulse Test
1 VDS,Drain-Source Voltage[V]
10
20
1 4 5 6 7 VGS,Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.9
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(on) [Ω], Drain-Source On-Resistance
0.8
IS, Reverse Drain Current [A]
150 C
o
0.7
VGS = 10V VGS = 20V
10
25 C
.