Document
SEMICONDUCTOR
TTC5200
Silicon NPN triple diffusion planar transistor 15A/230V/150W
RoHS RoHS
Nell High Power Products
20.00±0.20 18.00
ø3.30 ± 0.20
5.00
3.00
2.00 9.00
4.00
6.00 20.50 26.00
TO-3PL
3.00 2.50 (typ.)
FEATURES
High-speed switching High collector-emitter voltage: VCEO = 230V(min) Complementary to TTA1943 TO-3PL package which can be installed to the heat sink with one screw
1.00 (typ.)
2.50
0.60 5.45 ± 0.05 3.20
5.45 ± 0.05
1
2
3
1. BASE 2. COLLECTOR (HEAT SINK)
C
APPLICATIONS
Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage
3. EMITTER
B
E
PNP
All dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current, tp ≤ 5ms Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE 230 230 5 15 A 30 1.5 150 150 ºC -55 to 150 W V UNIT
www.nellsemi.com
Page 1 of 3
SEMICONDUCTOR
TTC5200
RoHS RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL ICBO I EBO V (BR)CEO V CBO V EBO h FE PARAMETER Collector cutoff current Emitter cutoff current Collector to emitter breakdown voltage Collector to base voltage Emitter to base voltage Forward current transfer ratio (DC current gain) Collector to emitter voltage Base to emitter voltage Transition frequency Collector output capacitance CONDITIONS V CBO = 230V, l E = 0 V EBO = 5V, l C = 0 l CEO = 50mA l CBO = 50 mA l EBO = 0. 1mA V CE = 5V, l C = 1A V CE = 5V, l C = 7A l C = 8A, I B = 0.8V l C = 7A, V CE = 5V V CE = 5V, l C = 1A V CB = 10V, l E = 0, f = 1MHz 30 145 230 230 5 80 35 3.0 V V BE fT C ob 1.5 MHz pF 160 V MIN TYP MAX 5.0 µA 5.0 UNIT
V CE(sat)
Fig.1 l C -V CE Characteristics
16
Common emitter T C = 25 ° C Single pulse test
400m A A A A 300m
Fig.2 h FE -l C Characteristics
1000
Collector current, l C (A)
12
200m
DC Current Gain, h FE
T C = 100 °C
150m
100
25 °C
100mA
8
-55 °C
60mA
40mA
10
Common emitter V CE = 5V Single pulse test
4 l B = 20mA 0 0 2 4 6 8 10
1 0.001
0.01
0.1
1
10
100
Collector emitter voltage, V CE (V)
Collector Current, l C (A)
Fig.3 V CE (sat) - I C Temperature Characteristics
Collector-Emitter Saturation Voltage, V CE(sat) (V)
Fig.4 V BE (sat) - I C Temperature Characteristics Base -Emitter Saturation Voltage, V BE(sat) (V)
10
10
1
0.1
T C = 100 ° C
1
-55 °C T C = 100 °C 25 °C Common emitter I B /I B = 10V Single pulse test
0.01
25 ° C -55° C
Common emitter I C /I B = 10 Single pulse test
0.001 0.001
0.01
0.1
1
10
100
0.1 0.001
0.01
0.1
1
10
100
Collector current, I C (A)
Collector current, l C (A)
www.nellsemi.com
Page 2 of 3
SEMICONDUCTOR
TTC5200
RoHS RoHS
Nell High Power Products
Fig.5 I C - V BE Temperature Characteristics
16 200
Fig.6 P C -Ta Derating
12
Collector Power Dissipation, P C (W)
Collector Current, l C (A)
150
Infinite heat sink
8
-55° C 25 ° C
100
4
T C = 100 ° C
Common emitter V CE = 5V Single pulse test
50
0 0 0.4 0.8 1.2 1.6 2.0
0 0 50 100 150 200
Base-Emitter Voltage, V BE (V)
Ambient Temperature, T a (°C)
Fig.7 Transient thermal resistance
10
Transient thermal resistance, R th(j-c) ( ° C/W)
Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse T C = 25 ° C Infinite heat sink
1
0.1
0.01 0.001 0.01 0.1 1 10 100
Pulse width, t (s)
Fig.8 Safe Operating Area (SOA)
100
I C MAX (Pulse)*
Collector Current, l C (A)
I C MAX (continuous)
10
DC operation T C = 25 ° C
1ms* 10ms*
100ms* 1
0.1
Curves must be derated linearly with increase in temperature.
0.01 1 10 100
V CEO MAX
*Single nonrepetitive pulse T C = 25 ° C
1000
Collector-Emitter Voltage, V CE (V)
www.nellsemi.com
Page 3 of 3
.