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TTC5200 Dataheets PDF



Part Number TTC5200
Manufacturers Nell
Logo Nell
Description Silicon NPN Transistor
Datasheet TTC5200 DatasheetTTC5200 Datasheet (PDF)

SEMICONDUCTOR TTC5200 Silicon NPN triple diffusion planar transistor 15A/230V/150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00 ø3.30 ± 0.20 5.00 3.00 2.00 9.00 4.00 6.00 20.50 26.00 TO-3PL 3.00 2.50 (typ.) FEATURES High-speed switching High collector-emitter voltage: VCEO = 230V(min) Complementary to TTA1943 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20 5.45 ± 0.05 1 2 3 1. BASE 2. COLLECTOR (HEAT SINK) C A.

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SEMICONDUCTOR TTC5200 Silicon NPN triple diffusion planar transistor 15A/230V/150W RoHS RoHS Nell High Power Products 20.00±0.20 18.00 ø3.30 ± 0.20 5.00 3.00 2.00 9.00 4.00 6.00 20.50 26.00 TO-3PL 3.00 2.50 (typ.) FEATURES High-speed switching High collector-emitter voltage: VCEO = 230V(min) Complementary to TTA1943 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 2.50 0.60 5.45 ± 0.05 3.20 5.45 ± 0.05 1 2 3 1. BASE 2. COLLECTOR (HEAT SINK) C APPLICATIONS Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage 3. EMITTER B E PNP All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO V CEO V EBO IC I CP IB PC Tj T stg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current, tp ≤ 5ms Base current Collector power dissipation Junction temperature Storage temperature T C = 25 °C VALUE 230 230 5 15 A 30 1.5 150 150 ºC -55 to 150 W V UNIT www.nellsemi.com Page 1 of 3 SEMICONDUCTOR TTC5200 RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL ICBO I EBO V (BR)CEO V CBO V EBO h FE PARAMETER Collector cutoff current Emitter cutoff current Collector to emitter breakdown voltage Collector to base voltage Emitter to base voltage Forward current transfer ratio (DC current gain) Collector to emitter voltage Base to emitter voltage Transition frequency Collector output capacitance CONDITIONS V CBO = 230V, l E = 0 V EBO = 5V, l C = 0 l CEO = 50mA l CBO = 50 mA l EBO = 0. 1mA V CE = 5V, l C = 1A V CE = 5V, l C = 7A l C = 8A, I B = 0.8V l C = 7A, V CE = 5V V CE = 5V, l C = 1A V CB = 10V, l E = 0, f = 1MHz 30 145 230 230 5 80 35 3.0 V V BE fT C ob 1.5 MHz pF 160 V MIN TYP MAX 5.0 µA 5.0 UNIT V CE(sat) Fig.1 l C -V CE Characteristics 16 Common emitter T C = 25 ° C Single pulse test 400m A A A A 300m Fig.2 h FE -l C Characteristics 1000 Collector current, l C (A) 12 200m DC Current Gain, h FE T C = 100 °C 150m 100 25 °C 100mA 8 -55 °C 60mA 40mA 10 Common emitter V CE = 5V Single pulse test 4 l B = 20mA 0 0 2 4 6 8 10 1 0.001 0.01 0.1 1 10 100 Collector emitter voltage, V CE (V) Collector Current, l C (A) Fig.3 V CE (sat) - I C Temperature Characteristics Collector-Emitter Saturation Voltage, V CE(sat) (V) Fig.4 V BE (sat) - I C Temperature Characteristics Base -Emitter Saturation Voltage, V BE(sat) (V) 10 10 1 0.1 T C = 100 ° C 1 -55 °C T C = 100 °C 25 °C Common emitter I B /I B = 10V Single pulse test 0.01 25 ° C -55° C Common emitter I C /I B = 10 Single pulse test 0.001 0.001 0.01 0.1 1 10 100 0.1 0.001 0.01 0.1 1 10 100 Collector current, I C (A) Collector current, l C (A) www.nellsemi.com Page 2 of 3 SEMICONDUCTOR TTC5200 RoHS RoHS Nell High Power Products Fig.5 I C - V BE Temperature Characteristics 16 200 Fig.6 P C -Ta Derating 12 Collector Power Dissipation, P C (W) Collector Current, l C (A) 150 Infinite heat sink 8 -55° C 25 ° C 100 4 T C = 100 ° C Common emitter V CE = 5V Single pulse test 50 0 0 0.4 0.8 1.2 1.6 2.0 0 0 50 100 150 200 Base-Emitter Voltage, V BE (V) Ambient Temperature, T a (°C) Fig.7 Transient thermal resistance 10 Transient thermal resistance, R th(j-c) ( ° C/W) Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse T C = 25 ° C Infinite heat sink 1 0.1 0.01 0.001 0.01 0.1 1 10 100 Pulse width, t (s) Fig.8 Safe Operating Area (SOA) 100 I C MAX (Pulse)* Collector Current, l C (A) I C MAX (continuous) 10 DC operation T C = 25 ° C 1ms* 10ms* 100ms* 1 0.1 Curves must be derated linearly with increase in temperature. 0.01 1 10 100 V CEO MAX *Single nonrepetitive pulse T C = 25 ° C 1000 Collector-Emitter Voltage, V CE (V) www.nellsemi.com Page 3 of 3 .


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