(SST39LF801C / SST39LF802C) 8 Mbit (x16) Multi-Purpose Flash Plus
8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF8...
Description
8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C
Data Sheet
The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories.
Features
Organized as 512K x16 Single Voltage Read and Write Operations
– 2.7-3.6V for SST39VF801C/802C – 3.0-3.6V for SST39LF801C/802C
Security-ID Feature
– SST: 128 bits; User: 128 words
Fast Read Access Time:
– 70 ns for SST39VF801C/802C – 55 ns for SST39LF801C/802C
Superior Reliability
– Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention
Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical)
Low Power Consumption (typical values at 5 MHz)
– Active Current: 5 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical)
Automatic Write Timing
– Internal VPP Generation
Hardware Block-Protection/WP# Input Pin
– Top Block-Protection (top 8 KWord) – ...
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