BLS6G2735LS-30

BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 VDS (V) 32 32 32 PL (W) 30 35 30 Gp (dB) 13 14 12 D (%) 50 50 47 tr (ns) 20 20 20 tf (ns) 10 10 10 Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz 1.2 Features and benefits        Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz Free Datasheet http://www.datasheetlist.com/ NXP Semiconductors BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLS6G2735L-30 (SOT1135A) 1 2 3 2 3 sym112 1 BLS6G2735LS-30 (SO...