Single N-Channel Power MOSFET
FDMA7632 Single N-Channel Power Trench® MOSFET
FDMA7632
Single N-Channel PowerTrench® MOSFET
May 2014
30 V, 9 A, 19 m...
Description
FDMA7632 Single N-Channel Power Trench® MOSFET
FDMA7632
Single N-Channel PowerTrench® MOSFET
May 2014
30 V, 9 A, 19 mΩ Features
General Description
Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7 A Low Profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm Free from halogenated compounds and antimony oxides
RoHS compliant
This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The low rDS(on) and gate charge provide excellent switching performance.
Application
DC – DC Buck Converters
Pin 1 Drain
DD G Source
Bottom Drain Contact
D
D
D
D
G
S
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDSS VGSS ID
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a) (Note 1b)
Ratings 30 ±20 9 24 2.4 0.9
–55 to +150
Units V V A
W °C
RθJA RθJA
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
52
(Note 1b)
145
°C/W
Device Marking 632
Device FDMA7632
Package MicroFET 2x2
Reel Size 7 ’’
Tape Width 8 mm
Quantity 3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMA7632 Rev.C3
www.fairchild...
Similar Datasheet