BAS21HT1G

BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s Symbol VR VRRM IF IFRM IFSM(surge) IFSM 20 20 10 4 1 Value 250 250 200 500 625 Unit Vdc Vdc mAdc mA mAdc A 1 1 CATHODE 2 ANODE 2 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM JS M G G JS M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Unit mW mW/°C °C/W °C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 200 1.57 RqJA TJ, Tstg 635 −55 to +150 ORDERING INFORMATION Device BAS21HT1G NSVBAS21HT1G NSVBAS21HT3G Package SOD−323 (Pb−Free) SOD−323 (Pb−Free) SOD−323 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stres...