TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Curr...
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS V (BR) GDS
VGS = -30 V, VDS = 0 VDS = 0, IG = -100 mA
¾ -50
IDSS (Note 1)
VDS = 10 V, VGS = 0
1.2
VGS (OFF) ïYfsï Ciss
VDS = 10 V, ID = 0.1 mA
-0.25
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0
VDS = 10 V, VGS = 0, f = 1 MHz
¾
Crss RDS (ON)
VDG = 10 V, ID = 0, f = 1 MHz
VDS = 10 mV, VGS = 0
(Note 2)
¾ ¾
¾ ¾
¾
¾ 19 13 3 80
-1.0 ¾
14
-1.5 ¾ ¾ ¾ ¾
nA V
mA
V mS pF pF W
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA Note 2: Condition of the typical value IDSS = 5 mA
1 2003-03-26
2SK365
2 2003-03-26
2SK365
3 2003-03-26
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