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Ordering number : ENN8275
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2169 / 2SC6017
Applications
•
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
• • • •
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications ( ) : 2SA2169
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions Ratings (-50)100 (--)50 Unit V V V A A A W W °C °C
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(-)6 (--)10 (--)13 (-)2 0.95
DataSh
ee
Tc=25°C
20 150 --55 to +150
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)1A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz IC=(--)5A, IB=(-)250mA IC=(--)5A, IB=(-)250mA 200 (130)200 (90)60 (--290)180 (--)0.93 (--580)360 (--)1.4 Ratings min typ max (--)10 (--)10 (560)700 MHz pF mV V Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32505EA TS IM TB-00001269 No.8275-1/5
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2SA2169 / 2SC6017
Continued from preceding page.
Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=(--)100µA, IE=0 IC=(--)1mA, RBE=∞ IE=(-)100µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min (--50)100 (--)50 (--)6 (70)40 (650)1000 (60)80 typ max Unit V V V ns ns ns
Package Dimensions unit : mm 2045B
6.5 5.0 4
Package Dimensions unit : mm 2044B
2.3
1.5
0.5
6.5 5.0 4
2.3
1.5
0.5
5.5
7.0
0.8 1.6
1.2
0.85 1 0.6
0.8
0.5 2 3
2.5
7.5
1.2
0.85 0.7
5.5
7.0
0.6 1 2 3
0.5
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
1.2 0 to 0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
2.3
2.3
2.3
2.3
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Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB + 470µF
DataSh
ee
RL +
100µF VBE= --5V
IC=20IB1= --20IB2=3A
VCC=20V
For PNP, the polarity is reversed.
--5.0
IC -- VCE
2SA2169
--16 A m mA
5.0
IC -- VCE
2SC6017
--4.5
A --14m
Collector Current, IC -- A
4.5
Collector Current, IC -- A
--4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0
0 --2
8 --1 mA
--12mA --10mA
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
2
1 A 0m
8mA
16m
A
14mA
12mA 10mA 8mA
--8mA
--6mA
--4mA
--2mA
6mA
4mA
2mA IB=0
0 0.5 1.0 1.5 2.0 IT08962
IB=0
0 --0.5 --1.0 --1.5 --2.0 IT08961
0
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Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.8275-2/5
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2SA2169 / 2SC6017
--1.0
IC -- VBE
2SA2169 VCE= --2V
1.0
IC -- VBE
2SC6017 VCE=2V
Collector Current, IC -- A
--0.6
Collector Current, IC -- A
--0.8
0.8
0.6
--0.4
0.4
Ta= --25 °C
Ta= --25 °C
25°C
75°C
25°C
0.6
--0.2
0.2
0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0 0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0
Base-to-Emitter Voltage, VBE -- V
1000 7
IT08963 1000
Base-to-Emitter Voltage, VBE -- V
75°C
IT08964
hFE -- IC
Ta=75°C
hFE -- IC
Ta=75°C
25°C
--25°C
2SA2169 VCE= --2V DC Current Gain, hFE
7 5
2SC6017 VCE=2V
5
DC Current Gain, hFE
25°C
3
--25°C
3
2
2
100 7 5 --0.01
100 7 5 0.01
2
3
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5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5
5 7 --10 IT08965
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
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3
Collector Current, IC.