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25N60N

FCH25N60N

Description

FCH25N60N — N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A Ultra Low Gate Charge (Typ. Qg = 57 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) 100% Avalanche Tested RoHS Compliant Description The SupreMOS® MOSFET is Fairc...

Fairchild Semiconductor

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