SVD7N65AT

SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD7N65AT SVD7N65AF Package TO-220-3L TO-220F-3L Marking SVD7N65AT SVD7N65AF Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.11.10 Page 1 of 7 Free Datasheet http://www.datasheet-pdf.com/ SVD7N65AT/F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 160 1.28 609 -55～+150 -55～+150 Rating SVD7N65AT 650 ±30 7.0 28 52 0.42 SVD7N65AF Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Parameter Therma...