STP5NB100

® STP5NB100 STP5NB100FP N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET T YPE STP5NB100 STP5NB100F P ν ν ν ν ν V DSS 1000 V 1000 V R DS(on) < 2.7 Ω < 2.7 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt(1 ) V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P5NB100 STP5NB100FP 1000 1000 ± 30 5 3....