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HGTP5N120BND

Part Number	HGTP5N120BND
Manufacturer	Intersil Corporation
Description	N-Channel IGBT
Features	of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction ...
Published	Mar 23, 2005
Datasheet	HGTP5N120BND PDF File

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part ...

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