DatasheetsPDF.com

HGTP3N60C3D

Intersil Corporation
Part Number HGTP3N60C3D
Manufacturer Intersil Corporation
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.2 6A, 600V, UFS Series N-Channel IGBT with Anti-Par...
Datasheet PDF File HGTP3N60C3D PDF File

HGTP3N60C3D
HGTP3N60C3D

Overview
HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.
2 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49113.
The diode used in anti-parallel with the IGBT is the development type TA49055.
The IGBT is ideal for many high voltage switching applications operating at moderate ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)