DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2341
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK23...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2341
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2341 is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2
FEATURES
φ3.2 ± 0.2
Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A)
3 ± 0.1 1 2 3 4 ± 0.2
High Avalanche Capability Ratings
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
VDSS VGSS ID (DC) ID (pulse)*
250 ± 30 ± 11 ± 44 35 2.0 –55 to +150 150 11 320
V V A A W W °C °C A mJ
1 2 3 0.7 ± 0.1 2.54 TYP.
13.5 MIN. 0.65 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (Ta = 25 °C) PT2 Storage Temperature Channel Temperature Single Avalanche Current Single Avalanche Energy
*PW ≤ 10 µs, Duty Cycle ≤ 1 % **Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
1.3 ± 0.2 1.5 ± 0.2 2.54 TYP.
12.0 ± 0.2
LOW Ciss
Ciss = 1090 pF TYP.
15.0 ± 0.3
2.5 ± 0.1
Tstg Tch IAS** EAS**
1. Gate 2. Drain 3. Source
MP-45F(SIOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Source (S) Gate (G) Body diode
Document No. TC-2511 (O.D. No. TC–8070) Da...