HGTP3N60B3

HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 File Number 4368.1 7A, 600V, UFS Series N-Channel IGBTs The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49192. Features 7A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Packaging JEDEC TO-220AB E COLLECTOR (FLANGE) C G Ordering Information PART NUMBER HGTD3N60B3S HGT1S3N60B3S HGTP3N60B3 PACKAGE TO-252AA TO-263AB TO-220AB BRAND G3N60B G3N60B3 G3N60B3 COLLECTOR (FLANGE) G E JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g. HGTD3N60B3S9A. Symbol JEDEC TO-252AA C COLLECTOR (FLANGE) G E G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,...