BD501B

isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD501 55 VCBO Collector-Base Voltage V BD501B 85 BD501 50 VCEO Collector-Emitter Voltage V BD501B 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 10 A 75 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD501 BD501B IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD501 IC= 5A; IB= 0.5A BD501B IC= 3.5A; IB= 0.35A VBE(on) BD501 Base-Emitter On Voltage BD501B IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V ICBO Collector Cutoff Current VCB= 55V;IE= 0 VCB= 85V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain BD501 BD501B IC= 5A; VCE= 4V IC= 3.5A; VCE= 4V fT Current-Ga...