DatasheetsPDF.com

HGTP2N120BND

Part Number	HGTP2N120BND
Manufacturer	Intersil Corporation
Description	N-Channel IGBT
Features	of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction...
Published	Mar 23, 2005
Datasheet	HGTP2N120BND PDF File

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The ...

Similar Datasheet

HGTP2N120BN N-Channel IGBT - Intersil Corporation
HGTP2N120BND N-Channel IGBT - Intersil Corporation

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)