EE-SY413

Photomicrosensor (Reflective) EE-SY313/-SY413 Be sure to read Precautions on page 24. ■ Dimensions Note: All units are in millimeters unless otherwise indicated. Five, 0.5 ■ Features Incorporates an IC chip with a built-in detector element and amplifier. Incorporates a detector element with a built-in temperature compensation circuit. Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover. A wide supply voltage range: 4.5 to 16 VDC Directly connects with C-MOS and TTL. Dark ON model (EE-SY313) Light ON model (EE-SY413) Recommended sensing distance = 4.4 mm ■ Absolute Maximum Ratings (Ta = 25°C) Internal Circuit AV O KG Terminal No. Name A Anode K Cathode V Power supply (Vcc) O Output (OUT) G Ground (GND) 15 to 18 17 to 24 Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm ≤ 6 6 < mm ≤ 10 10 < mm ≤ 18 18 < mm ≤ 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Item Symbol Rated value Emitter Forward current IF 50 mA (see note 1) Reverse voltage VR 4V Pulse forward IFP current 1A (see note 2) Detector Power supply VCC voltage 16 V Output voltage VOUT 28 V Output current IOUT 16 mA Permissible POUT output dissipa- tion 250 mW (see note 1) Ambient tem- Operating perature Storage Topr Tstg –40°C to 65°C –40°C to 85°C Soldering temperature Tsol 260°C (see note 3) Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°...