Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display Horizon...
Ordering number:ENN6297
NPN Triple Diffused Planar Silicon
Transistor
2SC5578
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC5578]
6.0
20.0
3.3
5.0
26.0
2.0 3.4
20.7
2.0
1.0
0.6 1.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
5.45
Conditions
2.8
1
2
3
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
Ratings 1600 800 6 15 35 3.5 140 150 –55 to +150
Unit V V V A A W W ˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Symbol ICES VCE=1600V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 ICBO VCB=800V, IE=0 hFE1 hFE2 VCE=5V, IC=1.0A VCE=5V, IC=11A Conditions Ratings min 800 1.0 10 15 4 30 7 typ max 1.0 Unit mA V mA µA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other app...
