HGTP12N60C3D, HGT1S12N60C3DS
Data Sheet December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. ...
