HGTG5N120CND

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 File Number 4598.2 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49307. Features 25A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB ALTERNATE VERSION E C Ordering Information PART NUMBER HGTG5N120CND HGTP5N120CND HGT1S5N120CNDS PACKAGE TO-247 TO-220AB TO-263AB BRAND 5N120CND 5N120CND 5N120CND G COLLECTOR (FLANGE) JEDEC TO-263AB NOTE: When ord...