HGTG32N60E2

HGTG32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features 32A, 600V Latch Free Operation Typical Fall Time - 600ns High Input Impedance Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. This device incorporates generation two design techniques which yield improved peak current capability and larger short circuit withstand capability than previous designs. PACKAGING AVAILABILITY PART NUMBER HGTG32N60E2 PACKAGE TO-247 BRAND G32N60E2 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG32N60E2 600 600 50 32 200 ±20 ±30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 3 15 UNITS V V A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = ...