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HGTG30N60A4D

Fairchild Semiconductor
Part Number HGTG30N60A4D
Manufacturer Fairchild Semiconductor
Description N-Channel IGBT
Published Mar 23, 2005
Detailed Description HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60...
Datasheet PDF File HGTG30N60A4D PDF File

HGTG30N60A4D
HGTG30N60A4D

Overview
HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49343.
The diode used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has be...


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