HGTG30N60A4

HGTG30N60A4 Data Sheet January 2000 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343. Features >100kHz Operation at 390V, 30A 200kHz Operation at 390V, 18A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC Low Conduction Loss Temperature Compensating SABER Model www.intersil.com Packaging JEDEC STYLE TO-247 E C Ordering Information PART NUMBER HGTG30N60A4 NOTE: PACKAGE TO-247 BRAND G30N60A4 G When ordering, use the entire part number. COLLECTOR (FLANGE) C Symbol G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4...