HGTG30N120D2

HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features 30A, 1200V Latch Free Operation Typical Fall Time - 580ns High Input Impedance Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG30N120D2 PACKAGE TO-247 BRAND G30N120D2 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Formerly Developmental Type TA49010 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG30N120D2 1200 1200 50 30 200 ±20 ±30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 6 15 UNITS V V A A A V V W W/oC oC oC µS µS Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . ....