HGTG20N60C3D

HGTG20N60C3D Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49179. Features 45A, 600V, TC = 25oC 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG20N60C3D PACKAGE TO-247 BRAND G20N60C3D NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,8...