HGTG20N60A4

HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 4781.1 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339. Features >100kHz Operation at 390V, 20A 200kHz Operation at 390V, 12A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC Low Conduction Loss Temperature Compensating SABER™ Model www.intersil.com Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-220AB ALTERNATE VERSION E Ordering Information PART NUMBER HGTP20N60A4 HGTG20N60A4 PACKAGE TO-220AB TO-247 BRAND 20N60A4 20N60A4 C G COLLECTOR (FLANGE) NOTE: When ordering, use the entire part number. Symbol C JEDEC STYLE TO-247 E C G G E COLLECTOR (FLANGE) INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,...