HGTG20N50C1D
April 1995
20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER ...
HGTG20N50C1D
April 1995
20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE
Features
20A, 500V Latch Free Operation Typical Fall Time < 500ns High Input Impedance Low Conduction Loss With Anti-Parallel Diode tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.
PACKAGING AVAILABILITY PART NUMBER HGTG20N50C1D PACKAGE TO-247 BRAND G20N50C1D
Terminal Diagram
C
G
E
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG20N50C1D 500 500 26 20 35 ±20 26 20 75 0.8 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . ....