HGTG15N120C3D

HGTG15N120C3D May 1997 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145. Features 35A, 1200V at TC = 25oC 1200V Switching SOA Capability Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . 350ns Short Circuit Rating Low Conduction Loss Ordering Information PART NUMBER HGTG15N120C3D PACKAGE TO-247 BRAND 15N120C3D NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49133. Symbol C G E Packaging JEDEC STYLE TO-247 E C G COLLECTOR (FLANGE) INTERSIL CORPRATION’s IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,4...