HGTG15N120C3

HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S June 1997 35A, 1200V, UFS Series N-Channel IGBTs Description The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features 35A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Ordering Information PART NUMBER HGTG15N120C3 HGTP15N120C3 HGT1S15N120C3 HGT1S15N120C3S PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND 15N120C3 15N120C3 15N120C3 15N120C3 Symbol C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263 variant in tape and reel; i.e., HGT1S15N120C3S9A. G Formerly Developmental Type TA49145. E Packaging JEDEC STYLE TO-247 EMITTER COLLECTOR GATE JEDEC TO-220AB (ALTERNATE VERSION) EMITTER COLLECTOR GATE COLLECTOR (FLANGE) COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE JEDEC TO-263AB M A A CO...