HGTG12N60D1D

HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features 12A, 600V Latch Free Operation Typical Fall Time <500ns Low Conduction Loss With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG12N60D1D PACKAGE TO-220AB BRAND G12N60D1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG12N60D1D 600 600 21 12 48 ±20 30A at 0.8 BVCES 21 12 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . ....