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HGTG11N120CND

Part Number	HGTG11N120CND
Manufacturer	Fairchild Semiconductor
Description	N-Channel IGBT
Features	of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction...
Published	Mar 23, 2005
Datasheet	HGTG11N120CND PDF File

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The ...

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