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HGTD8P50G1

8A/ 500V P-Channel IGBTs

Description

HGTD8P50G1, HGTD8P50G1S March 1997 8A, 500V P-Channel IGBTs Package JEDEC TO-251AA EMITTER COLLECTOR GATE Features 8A, 500V 3.7V VCE(SAT) Typical Fall Time - 1800ns High Input Impedance TJ = +150oC (FLANGE) COLLECTOR Description The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed...

Intersil Corporation

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HGTD8P50G1 8A/ 500V P-Channel IGBTs - Intersil Corporation
HGTD8P50G1S 8A/ 500V P-Channel IGBTs - Intersil Corporation

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