HGTD7N60C3S

Data Sheet HGTD7N60C3S, HGTP7N60C3 December 2001 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49115. Ordering Information PART NUMBER PACKAGE BRAND HGTD7N60C3S TO-252AA G7N60C HGTP7N60C3 TO-220AB G7N60C3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. Symbol C Features 14A, 600V at TC =...