S E M I C O N D U C T O R
HGTD3N60C3, HGTD3N60C3S
6A, 600V, UFS Series N-Channel IGBTs
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Th...
