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HGTD1N120CNS Dataheets PDF



Part Number HGTD1N120CNS
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description 6.2A/ 1200V/ NPT Series N-Channel IGBT
Datasheet HGTD1N120CNS DatasheetHGTD1N120CNS Datasheet (PDF)

HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching a.

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HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 File Number 4652.2 6.2A, 1200V, NPT Series N-Channel IGBT The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49317. Features • 6.2A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Avalanche Rated • Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HGTD1N120CNS HGTP1N120CN PACKAGE TO-252AA TO-220AB BRAND 1N120C 1N120CN Packaging JEDEC TO-220AB E C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120CNS9A COLLECTOR (FLANGE) Symbol C JEDEC TO-252AA G G E COLLECTOR (FLANGE) E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 SABER™ is a trademark of Analogy, Inc. HGTD1N120CNS, HGTP1N120CN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD1N120CNS, HGTP1N120CN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1200 6.2 3.2 6 ±20 ±30 6A at 1200V 60 0.476 10 -55 to 150 300 260 8 11 UNITS V A A A V V W W/oC mJ oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC. 3. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6.0 6 TYP 20 2.05 2.75 7.1 9.7 13 16 MAX 250 1.0 2.4 3.2 ±250 19 28 UNITS V V µA µA mA V V V nA A V nC nC Col.


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