HGT1S2N120BNDS

HGTP2N120BND, HGT1S2N120BNDS Data Sheet January 2000 File Number 4698.2 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49310. Features 12A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Thermal Impedance SPICE Model www.intersil.com Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB (ALTERNATE VERSION) E Ordering Information PART NUMBER HGTP2N120BND HGT1S2N120BNDS PACKAGE TO-220AB TO-263AB BRAND 2N120BND 2N120BND COLLECTOR (FLANGE) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S2N120BND...