PSMN7R6-100BSE

PSMN7R6-100BSE 18 December 2012 N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of NXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low RDS(on) for low conduction losses 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 100 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 41 128 nC nC [1] Min - Typ - Max 100 75 296 Unit V A W Static characteristics drain-source on-state resistance 6.5 7.6 mΩ Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.net/ NXP Semiconductors PSMN7R6-100BSE N-channel 100 V 7.6 mΩ...