HGT1S12N60C3

S E M I C O N D U C T O R HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. January 1997 Features 24A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Ordering Information PART NUMBER HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S PACKAGE TO-220AB TO-262AA TO-263AB BRAND P12N60C3 S12N60C3 S12N60C3 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. Formerly Developmental Type TA49123. G E Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) JEDEC TO-262AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) A JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER HARRIS SEMICONDUCTOR IGBT PRODU...