600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Description
HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The ...
