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HFM104 Dataheets PDF



Part Number HFM104
Manufacturers Formosa MS
Logo Formosa MS
Description Ultra fast recovery type
Datasheet HFM104 DatasheetHFM104 Datasheet (PDF)

Chip Silicon Rectifier HFM101 THRU HFM107 Ultra fast recovery type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Mold.

  HFM104   HFM104



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Chip Silicon Rectifier HFM101 THRU HFM107 Ultra fast recovery type Formosa MS SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.067(1.7) 0.060(1.5) 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE C DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 150 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TSTG -55 32 20 C / w pF +150 o C SYMBOLS MARKING CODE H11 H12 H13 H14 H15 H16 H17 V RRM 50 *1 V RMS 35 70 *2 VR *3 VF *4 T RR *5 Operating temperature (o C) (V) HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 (V) (V) 50 100 200 300 (V) (nS) 100 200 300 400 600 800 1.0 50 -55 to +150 1.3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage 140 210 280 420 560 400 600 800 1.7 75 *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM107) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 10 HF M1 0 3 5 4~ HF M1 0 INSTANTANEOUS FORWARD CURRENT,(A) 1~ HF M1 0 HF M1 0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle H 1.0 FM 10 6~ H FM 10 7 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. ( ) PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 120 100 80 60 40 20 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) .


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