Document
Chip Silicon Rectifier
HFM101 THRU HFM107
Ultra fast recovery type
Formosa MS
SMA
0.185(4.8) 0.177(4.4) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.067(1.7) 0.060(1.5)
0.110(2.8) 0.094(2.4)
0.165(4.2) 0.150(3.8)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDE C DO-214AC Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C
o
Symbol IO IFSM
MIN.
TYP.
MAX. 1.0 30 5.0 150
UNIT A A uA uA
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR Rq JA CJ TSTG -55 32 20
C / w pF
+150
o
C
SYMBOLS
MARKING CODE H11 H12 H13 H14 H15 H16 H17
V RRM
50
*1
V RMS
35 70
*2
VR
*3
VF
*4
T RR
*5
Operating temperature (o C)
(V) HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107
(V)
(V) 50 100 200 300
(V)
(nS)
100 200 300 400 600 800
1.0 50 -55 to +150 1.3
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
140 210 280 420 560
400 600 800 1.7 75
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM107)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2 1.0 0.8 0.6 0.4 0.2 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
10
HF M1 0 3 5 4~ HF M1 0
INSTANTANEOUS FORWARD CURRENT,(A)
1~
HF M1 0
HF M1 0
.1
Tj=25 C Pulse Width 300us 1% Duty Cycle
H
1.0
FM 10
6~ H
FM 10
7
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
30
.001 .4
.6
.8
1.0
1.2
1.4
1.6
1.8
24
FORWARD VOLT AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS
50W NONINDUCTIVE 10W NONINDUCTIVE
18
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
12
6
(+) 25Vdc (approx.) ( ) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T.
( ) PULSE GENERATOR (NOTE 2) (+)
0 1 5 10 50 100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr +0.5A
| | | | | | | |
JUNCTION CAPACITANCE,(pF)
120 100 80 60 40 20
0 -0.25A
-1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm
0 .01 .05 .1 .5 1 5 10 50 100
REVERSE VOLTAGE,(V)
.