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IRLI3705NPBF

International Rectifier
Part Number IRLI3705NPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 7, 2014
Detailed Description  Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink ...
Datasheet PDF File IRLI3705NPBF PDF File

IRLI3705NPBF
IRLI3705NPBF

Overview
 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free IRLI3705NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.
01 52A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Full Pak eliminates the need f...


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