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2SK4115
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ)
2SK4115
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5
Unit: mm
15.9max.
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg
Rating 900 900 ±30 7 21 150 491 7 15 150 −55~150
Unit V
1.8max.
1.0 -0.25
+0.3
5.45±0.2 0.6-0.1
+0.3
5.45±0.2 4.8max. 1 2 3 2.8
V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. GATE 2. DRAIN (HEATSINK) 3. SOURCE
JEDEC JEITA TOSHIBA
― SC-65 2−16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W 1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C, L = 18.4 mH, RG = 25 Ω, IAR = 7 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care.
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1
2007-07-24
Free Datasheet http://www.datasheet.in/
20.5±0.5
Absolute Maximum Ratings (Ta = 25°C)
2.0±0.3
2SK4115
www.DataSheet4U.com
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf ID = 3.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 10 V, ID = 3.5 A Min ⎯ ±30 ⎯ 900 2.0 ⎯ 3.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 5.0 1650 30 140 50 Max ±10 ⎯ 100 ⎯ 4.0 2.0 ⎯ ⎯ ⎯ pF Uni.