BSX26

BSX26 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for switching applications up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C at T c as e ≤ 100 °C Storage and Junction Temperature Value 40 40 15 4 500 0.36 1.2 0.68 – 65 to 200 Unit V V V V mA W W W °C 1/6 T s t g, T j November 1988 Free Datasheet http://www.datasheet.in/ BSX26 THERMAL DATA R t h j- cas e R t h j -amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CE S V (B R)CBO V (B R)CES V (BR)CE O * V (B R)E BO V CE( sat )* Parameter Collector Cutoff Current (V BE = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I C = 0) Collector-emitter Saturation Voltage Test Conditions V CE = 20 V V CE = 20 V I C = 100 µA I C = 100 µA I C = 10 mA I E = 100 µA I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 mA T amb = 85 °C I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 mA I C = 100 mA I C = 300 mA I C = 30 ...