L-32P3C

PHOTOTRANSISTOR L-32P3C Features !MECHANICALLY Description AND SPECTRALLY MATCHED TO P3 Made with NPN silicon phototransistor chips. THE L-34 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAA4192 APPROVED : J. Lu REV NO: V.4 CHECKED : Allen Liu DATE:MAR/06/2003 DRAWN:D.L.HUANG PAGE: 1 OF 2 Free Datasheet http://www.datasheet.in/ Electrical / Optical Characteristics at T)=25°C Sy m b o l Par am et er Min . Ty p . Max . Un it Tes t Co n d ic t io n I C=100uA, Ee=0mW/cm2 I E=100uA, Ee=0mW/cm2 I C=2mA, Ee=20mW/cm2 VCE=10V, Ee=0mW/cm2 V CE=5V, I C=1mA, R L=1000Ω VCE=5V, Ee=1mW/cm2, λ=940nm V BR C EO V BR EC O V CE (SAT) I C EO TR TF Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) 30 5 - 3 3 0.8 100 - V V V nA us us I (ON) On State Collector Current 0.1 0.5 - mA Absolute Maximum Ratings at T)=25°C Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead soldering Temperature (>5mm for 5sec) Max im u m Rat in g 30V 5V 10...